CHARIOT: examples of simulations


The input data included five lines of resist on silicon. A specified vertical profile was considered. A defect was added to a middle line, and a 2 keV electron beam was used to scann across the pattern.


An example of CHARIOT input data

Electron trajectories

Electron trajectories as a result of electron scattering in the sample are shown above. The influence of the electrical field over the target is noticeable: the trajectories of low energy electrons are curved.

SEM signal

Above is the SEM signal captured by a detector. Spikes at line edges are produced by electrons escaping from the line walls. The defect specified in the middle line is clearly visible in the SEM signal at the parameters used.


The energy deposition in the resist is shown for a 50 keV and 100 keV electron beam. At 100 keV, the energy spread of primary electrons in the resist is smaller than that at 50 keV.

Absorbed energy distribution in the resist on silicon

The CHARIOT software allows for the energy spread in EBL, called the proximity function, to be determined for any type of multilayered substrates.

Proximity effect correction experimental verification

Verification of results demonstrated a significant advantage of CHARIOT over regular Monte Carlo software.